Alternative interconnect structure for semiconductor devices

Details Alternative interconnect structure for semiconductor devices Alternative interconnect structure for semiconductor devices

2004-06-25

2008-03-11

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S761000, C438S780000, C257SE23132, C257SE23134, C257SE21245, C257SE21246, C257SE21256

Reexamination Certificate

active

07341935

ABSTRACT:
A semiconductor interconnect structure includes an organic and/or photosensitive etch buffer layer disposed over a contact surface. The structure further provides an interlevel dielectric formed over the etch buffer layer. A method for forming an interconnect structure includes etching to form an opening in the interlevel dielectric, the etching operation being terminated at or above the etch buffer layer. The etch buffer layer is removed to expose the contact surface using a removal process that may include wet etching, ashing or DUV exposure followed by developing or other techniques that do not result in damage to contact surface. The contact surface may be a conductive material such as silicide, salicide or a metal alloy.

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