Alternating cyclic pressure modulation process for selective are

Details Alternating cyclic pressure modulation process for selective are Alternating cyclic pressure modulation process for selective are

1992-03-16

1993-04-13

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

118719, 118721, 156656, 156657, 156662, 156345, 427252, 4272551, 427282, 437228, 437234, 437245, H01L 21306, B44C 122, C23F 100, C23C 1600

Patent

active

052019950

ABSTRACT:
A novel process for the selective deposition of solid-phase materials is disclosed, which process requires only the modulation of a single auxiliary gas within a suitable reactor assembly. According to the disclosed method, selective area deposition can be obtained on any desired microelectronic substrate by the creation of a vapor-phase chemical equilibrium system capable of deposition and etching the material to be deposited. The vapor-phase system is designed around a single reversible reaction wherein the material to be deposited equilibrates between that solid phase and its vapor-phase constituent species. By modulating an auxiliary gas flow into the reactor assembly, alternating deposition and etching processes can be obtained to yield an overall process which results in net overall selective and uniform deposition.

REFERENCES:
patent: 3232803 (1966-02-01), Barnett et al.
patent: 4264393 (1981-04-01), Gorin et al.
patent: 4422897 (1983-12-01), Horwitz
patent: 4468283 (1984-08-01), Ahmed
patent: 4497683 (1985-02-01), Celler et al.
patent: 4518455 (1985-05-01), Muething
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
patent: 4617087 (1986-10-01), Iyer et al.
patent: 4844775 (1989-07-01), Keeble
patent: 4863549 (1989-09-01), Grunwald
patent: 4877479 (1989-10-01), McNeil et al.
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5037775 (1991-08-01), Reisman
Chemical Vapor Deposition and Solid-Vapor Equilibria, A Reisman and T. O. Sedgwick, Academic Press, Inc., 1976, pp. 1-90.
The Equilibrium Constant for the Reaction of ZnO+H.sub.2 and the Chemical Vapor Transport of ZnO Via the Zn+H.sub.2 O Reaction, A. Reisman, M. Berkenblit, R. Ghez, S. A. Chen, Journal of Elec. Materials, vol. 1, No. 3, 1972, pp. 395-419.
The Epitaxial Growth of ZnO on Sapphire and MgAl Spinel Using the Vapor Phase Reaction of Zn and H.sub.2 O, A. Reisman, M. Berkenblit, S. A. Chen, J. Angilello, Journal of Electronic Materials, vol. 2, No. 2, 1973, pp. 177-189.

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