Alternating aperture phase-shift mask fabrication method

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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06986972

ABSTRACT:
Embodiments of the invention include a method for forming alternating aperture phase-shift masks. An optically transparent substrate suitable for having a pattern of phase-shift regions formed thereon is provided. Alternatively, an opaque pattern is formed on the optically transparent substrate, the opaque pattern defining a pattern of phase-shift regions on the substrate. The phase shift regions are then ion implanted to damage the phase-shift regions. The damage penetrates to a predetermined depth and forms damaged regions that can be more easily etched than the adjacent undamaged portions of the substrate. The damaged portions define a final profile for phase shift recesses to be formed in the substrate. After implantation, substrate material is removed from the damaged phase-shift regions so that recesses are formed therein. The recesses are formed having a depth that corresponds to the depth of the damage caused in the phase-shift regions by the ion implantation.

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Levenson et al., “Improving Resolution in Photolithography with a Phase-Shifting Mask”, 1982 IEEE, pp. 1828-1836.
Van Der Broeke, Photronics, Inc., “Transferring Phase-Shifting Mask Technology into Mainstream Manufacturing”, undated, 5 pages.
Kim et al., “Application of a Multi-Step Quartz Etching Method to Strong PSMs”, SPIE vol. 4409 (2001), pp. 118-124.
McCallum et al., International SEMATECH, “Alternating PSM Mask Performance—A Study of Multiple Fabrication Technique Results”, undated, 6 pages.
Levenson, “Phase-Shifting Mask Strategies: Isolated Dark Lines”, Microlithography World, Mar./Apr. 1992, pp. 6-12.

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