Alterable capacitor memory array

Details Alterable capacitor memory array Alterable capacitor memory array

1976-06-18

1978-06-06

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Capacitors

365184, 357 23, G11C 1124, G11C 1140

Patent

active

040940080

ABSTRACT:
A novel memory array is disclosed, the array utilizing a matrix of variable threshold insulated gate field effect transistor cells. The cells are comprised solely of a gate region, having nitride and oxide layers, and a source region with the output data sensed, at the source, as a change of source charge as distinguished from the prior art sensing of a change of low impedance source voltage. In operation, each cell functions as an alterable capacitor. A negative pulse applied to the gate selects the cell. Variations in stored charge at the nitride-oxide interface causes changes in the threshold voltage and effective capacitance of the cell. The source charge may then be sensed to read the stored data.

REFERENCES:
patent: 3771148 (1973-11-01), Aneshansley
patent: 3911464 (1975-10-01), Chang et al.
patent: 3916390 (1975-10-01), Chang et al.
Kuo et al., 16-K RAM Built With Proven Process May Offer High Start-up Reliability, Electronics, 5/13/76, pp. 81-86.

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