AlSixOy as a new bi-layer high transmittance attenuating...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S322000, C430S323000, C430S324000

Reexamination Certificate

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06872496

ABSTRACT:
A bi-layer attenuating phase shifting film and method of forming the film are described. The bi-layer film has a first layer of AlSix1Oy1and a second layer of AlSix2Oy2. The first layer of AlSix1Oy1and the second layer of AlSix2Oy2are both deposited by sputtering using a sputtering system an aluminum target, a silicon target, a source of oxygen gas, and a source of argon gas. The index of refraction, n, and the extinction coefficient, k, of the deposited films are controlled by controlling the direct current, DC, power to the aluminum target and by controlling the oxygen flow rate. The values of n and k are selected to produce a bi-layer film having a transmittance of between about 15% and 45% and good chemical stability. The phase shift of the bi-layer film is determined by the index of refraction, extinction coefficient, and thickness of each of the films.

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“Attenuated phase shift mask materials for 248 and 193 nm lithography,” by B.W. Smith et al., J. Vac. Sci. Technol., B, vol. 14(6), pp. 3719-3723.

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