Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-03-01
2005-03-01
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S771000
Reexamination Certificate
active
06861756
ABSTRACT:
In a semiconductor integrated circuit device, upon connection of an interconnection made of aluminum or aluminum alloy and another interconnection made of Cu or Cu alloy, a barrier conductor film or plug is disposed at the joint portion between these interconnections. Among the interconnection layers, the uppermost one is made of a wiring material such as aluminum or aluminum alloy, while the lower, one is made of Cu or Cu alloy. The lowest interconnection is made of a conductive material other than Cu or Cu alloy. For example, the conductive material which permits minute processing and has both low resistance and high EM resistance such as tungsten is employed.
REFERENCES:
patent: 4107726 (1978-08-01), Schilling
patent: 4907066 (1990-03-01), Thomas et al.
patent: 4984061 (1991-01-01), Matsumoto
patent: 5394013 (1995-02-01), Oku et al.
patent: 5463255 (1995-10-01), Isono
patent: 5565707 (1996-10-01), Colgan et al.
patent: 5659201 (1997-08-01), Wollesen
patent: 5691572 (1997-11-01), Chung
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5786637 (1998-07-01), Tabara
patent: 5856707 (1999-01-01), Sardella
patent: 5955781 (1999-09-01), Joshi et al.
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6188135 (2001-02-01), Chan et al.
patent: 6265779 (2001-07-01), Grill et al.
patent: 6291885 (2001-09-01), Cabral, Jr. et al.
patent: 6362528 (2002-03-01), Anand
patent: A-8-78410 (1996-03-01), None
patent: A-8-148560 (1996-06-01), None
Maeda, K., “Semiconductor Manufacturing Equipment Corresponding to the Introduction of New Processes and Materials,” Electron Materials, Mar. 1996, pp. 22-27.
Bai et al., “Copper Interconnection Deposition Techniques and Integration,” 1996 Symposium on VLSI Technology Digest of Technical Papers, pp. 48-49.
Licata et al., “Interconnect Fabrication Processes and the Development of Low-Cost Wiring for CMOS Products,” IBM J. Res. Develop., vol. 39, No. 4, Jul. 1995, pp. 419-435.
Noguchi Junji
Owada Nobuo
Saito Tatsuyuki
Yamaguchi Hizuru
Antonelli Terry Stout & Kraus LLP
Cao Phat X.
Hitachi , Ltd.
LandOfFree
Semiconductor integrated circuit device and fabrication... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit device and fabrication..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device and fabrication... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3430372