AlN masking for selective etching of sapphire

Details AlN masking for selective etching of sapphire AlN masking for selective etching of sapphire

1975-12-31

1977-02-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156659, 156661, 156667, B29C 1708, C23F 102, H01L 750

Patent

active

040081117

ABSTRACT:
A method is disclosed for forming holes and depressions in aluminum oxide, including its sapphire form and spinels by etching using AlN as a maskant. This method is featured by the epitaxial deposition of an AlN film on a sapphire body, for instance. The AlN film is etched in a predetermined pattern and heat treated. The etchants used may be either H.sub.2 or molten Al which will selectively attack the sapphire substrate in the regions exposed by the AlN mask.

REFERENCES:
patent: 3743552 (1973-07-01), Fa
patent: 3753775 (1973-08-01), Robinson et al.
patent: 3855112 (1974-12-01), Tomozawa et al.
patent: 3899363 (1975-08-01), Dennard et al.

Affiliated with

Also associated with

Rating

AlN masking for selective etching of sapphire does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with AlN masking for selective etching of sapphire, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and AlN masking for selective etching of sapphire will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1436039