All-silicon monolithic motion sensor with integrated conditionin

Details All-silicon monolithic motion sensor with integrated conditionin All-silicon monolithic motion sensor with integrated conditionin

1995-11-03

1998-02-24

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438739, 438456, H01L 2100

Patent

active

057211620

ABSTRACT:
A motion sensor including a sensing wafer with a bulk micromachined sensing element, and a capping wafer on which is formed the conditioning circuitry for the sensor. The sensing and capping wafers are configured such that, when bonded together, the capping wafer encloses the sensing element to form a monolithic sensor. The capping wafer is further configured to expose bond pads on the sensing wafer, and to enable singulation of the two-wafer stack into individual dies. Wire bonds can be made to both wafers, such that the sensor can be packaged in essentially any way desired.

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