All optics type semiconductor image storage apparatus, and all o

Static information storage and retrieval – Read/write circuit – Optical

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365217, G11C 700

Patent

active

060814705

ABSTRACT:
An all optics type semiconductor image storage apparatus includes a superlative semiconductor device. The superlattice semiconductor device includes a superlattice layer which is formed by alternately laminating a barrier layer and a quantum well layer. The superlattice layer is interposed between two carrier confinement layers, one of which is formed on a surface of a semiconductor substrate. The superlattice semiconductor device has an effect of modulating a light absorbance in the vicinity of an absorption edge by canceling an internal electric field generated by a piezoelectric effect. This piezoelectric effect is due to a distortion occurring when the superlattice layer is formed. An image is stored so that, light incident into the superlattice semiconductor device at a first stable point is substantially transmitted, while light incident into the device at a second stable point is prevented from being substantially transmitted.

REFERENCES:
patent: 4893273 (1990-01-01), Usami
patent: 4922437 (1990-05-01), Sakata et al.
patent: 5311474 (1994-05-01), Urban
Thomas H. Barnes et al., "Bistable Optically Writable Image Memory Using Optical Feedback"; Optical Review, vol. 2, No. 2, (1995); pp. 103-105.
D.C. Burns et al., "A 256.times.256 SRAM-XOR Pixel Ferroelectric Liquid Crystal Over Silicon Spatial Light Modulator"; Optics Communications, 119 (Sep. 15, 1995); pp. 623-632.
Bleuse et al., "Blue Shift of the Absorption Edge in ALGain-AS-Superlattices: Proposal for an Original Electro-optical Modulator"; Dec. 26, 1988; Appl. Phys. Lett.; vol. 53, No. 26; pp. 2632-2634.
J.Y. Marzin et al., "Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs"; Aug. 1, 1994; vol. 73, No. 5, Physical Review Letters; pp. 716-719.
Couturier et al.; "Low Power All-Optical Bistability in InGaAs-A1InAs Superlattices: Demonstration of a Wireless Self-Electro-Optical Effect Device Operating at 1.5. mu m"; Applied Physics Letters; Feb. 7, 1994; vol. 64, No. 6; pp. 742-744.
Tominaga et al.; "Self-Electro-Optic Effect Device Using Wannier-Stark Localisation in an Unstrained InGaAs/InA1As Superlattice Grown on GaAs Substrate"; Electronics Letters; May 12, 1994, vol. 30, No. 10; pp. 782-784.
Hosoda et al.; "Optical Differentiator Based on Rapid Collapse of Wannier-Stark Loclization Due to Space Charge Field Screening"; Applied Physics Letters; Dec. 5, 1994; vol. 65, No. 23; pp. 2913-2915.

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