All-in-one polishing process for a semiconductor wafer

Details All-in-one polishing process for a semiconductor wafer All-in-one polishing process for a semiconductor wafer

2005-07-05

2005-07-05

Thomas, David B. (Department: 3723)

Abrading

Abrading process

Glass or stone abrading

C451S044000, C451S063000, C451S065000

Reexamination Certificate

active

06913520

ABSTRACT:
A semiconductor wafer has a top surface and an edge bevel surface, and a first material layer and a second material layer are respectively formed on the top surface and the edge bevel surface. A surface chemical mechanical polishing (surface CMP) process is performed to polish and remove portions of the first material layer down to a first thickness, and a rim CMP process is performed to completely remove the second material layer on the edge bevel surface down to the edge bevel surface thereafter to achieve a smooth surface of the edge bevel surface. Finally, a chemical cleaning process is performed to clean the edge bevel surface and the top surface, and the semiconductor wafer is dried thereafter.

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