Alkylsulfonium salts and photoresist compositions containing the

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

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430326, 430910, 430921, 522 31, G03C 1492, G03C 1494, G03C 176, C08F 246

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056353324

ABSTRACT:
A photoresist composition containing an alkylsulfonium salt compound represented by the following general formula (I): ##STR1## wherein R.sup.1 and R.sup.2 may be the same or different, each being a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, R.sup.3 is a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, a C.sub.5 to C.sub.7 2-oxocycloalkyl radical, or a linear or branched C.sub.3 to C.sub.8 2-oxoalkyl radical, and Y.sup.- represents a counter ion. The photoresist composition has high transparency to deep U.V. light having wavelengths of 220 nm or less and is capable of forming good fine patterns with high sensitivity, thus being useful as chemically amplified type resist which is exposed to the deep U.V. light from an ArF excimer laser.

REFERENCES:
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patent: 5230984 (1993-07-01), Tachiki et al.
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J. Crivello et al., "A New Preparation of Triarysulfonium . . . Selenides with Diaryliodonium Salts", Journal of Organic Chemistry, vol. 43, No. 15, 1978, pp. 3055-3058.
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