AlInAs semiconductor device contaning Si and P

Details AlInAs semiconductor device contaning Si and P AlInAs semiconductor device contaning Si and P

1996-12-20

1998-10-27

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 97, 257102, 257192, 257194, 257197, 372 43, 372 45, 372 46, H01L 3300

Patent

active

058280871

ABSTRACT:
The semiconductor device includes at least an Si-doped AlInAs layer formed on an InP substrate. The Si-doped AlInAs layer contains phosphorus.

REFERENCES:
patent: 5375137 (1994-12-01), Hirayama et al.
patent: 5436468 (1995-07-01), Nakata et al.
patent: 5448585 (1995-09-01), Belenky et al.
patent: 5606185 (1997-02-01), Nguyen et al.
patent: 5633516 (1997-05-01), Mishima et al.

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