Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S332000, C257SE29118, C257SE29131, C257SE29262, C257SE21629
Reexamination Certificate
active
07989886
ABSTRACT:
Manufacturing a power transistor by forming a gate structure on a first layer, forming a trench in the first layer, self aligned with the gate structure, and forming part of the transistor in the trench. By forming a spacer next to the gate, the spacer and gate can be used as a mask when forming the trench, to allow space for a source region next to the gate. The self-aligning rather than forming the gate after the trench means the alignment is more accurate, allowing size reduction. Another aspect involves forming a trench in a first layer, filling the trench, forming a second layer on either side of the trench with lateral overgrowth over the trench, and forming a source region in the second layer to overlap the trench. This overlap can enable the chip area to be reduced.
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Moens Peter
Tack Marnix
Bacon & Thomas PLLC
Fourson George
Semiconductor Components Industries LLC
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