Alignment-marker structure and method of forming the same in int

Details Alignment-marker structure and method of forming the same in int Alignment-marker structure and method of forming the same in int

1999-05-17

2000-05-09

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

257758, 257622, H01L 2329

Patent

active

060607866

ABSTRACT:
An alignment-marker structure and a method of forming the same in IC fabrication are provided. The alignment-marker structure is used for the purpose of assisting the precise alignment of a photomask used in photolithography on a wafer. In the fabrication process, a semiconductor substrate is prepared and then formed with a trench at a predefined location. A first conformal metallization layer is then formed over the substrate to a controlled thickness. Next, a sidewall-spacer structure is formed on the sidewall of the recessed portion of the first metallization layer. After this, a chemical-mechanical polishing (CMP) process is performed to polish away all the portions of the first metallization layer and the sidewall-spacer structure that lie over the top surface of the substrate. Finally, a second conformal metallization layer is formed over the substrate. Due to the conformal formation, the second metallization layer is formed with a recessed portion serving as the intended alignment mark. By the foregoing method, the resulting alignment-marker structure is more distinguishable than the prior art, allowing the mask alignment to be more precise.

REFERENCES:
patent: 4642672 (1987-02-01), Kitakata
patent: 5525840 (1996-06-01), Tominaga
patent: 5733801 (1998-03-01), Gojohbori
patent: 5893744 (1999-04-01), Wang
patent: 5904563 (1999-05-01), Yu
patent: 5926720 (1999-07-01), Zhao et al.

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