Alignment mark, use of a hard mask material, and method

Details Alignment mark, use of a hard mask material, and method Alignment mark, use of a hard mask material, and method

2006-10-10

2009-06-23

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S401000, C438S975000, C257SE21240, C257SE21490

Reexamination Certificate

active

07550379

ABSTRACT:
In a method to produce an alignment mark, an oxide layer and sacrificial layer are processed to comprise recesses. The recesses are filled with a filler material. During filling the recesses, a layer of filler material is formed on the sacrificial layer. The layer of filler material is removed by chemical mechanical polishing. The sacrificial layer protects the oxide layer during filling the recesses and removing the layer of filler material. The sacrificial layer is then removed by etching. This provides an unscratched oxide layer with protrusions. The oxide layer with protrusions is covered with a conducting layer whereby the protrusions punch through the oxide layer to form related protrusions. The related protrusions form an alignment mark.

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patent: 102 59 322 (2004-07-01), None

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