Alignment mark for use in making semiconductor devices

Details Alignment mark for use in making semiconductor devices Alignment mark for use in making semiconductor devices

1997-06-12

1998-12-08

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

H01L 23544

Patent

active

058474684

ABSTRACT:
An alignment mark formed on a surface of substrate for aligning with a mask through an irradiation of alignment light, which comprises a step formed with a concave portion and a convex portion and a metallic film deposited along the concave portion and the convex portion. A light absorption layer is formed over at least one of the concave portion and the convex portion reflecting the step, the light absorption layer lying over the concave portion having a different thickness from that of the light absorption layer lying over the convex portion when the light absorption layer is formed over both the concave portion and the convex portion, the light absorption layer comprising a material capable of absorbing at least a portion of wavelength region of the alignment light. The light absorption layer is desirably formed in a larger thickness on the convex portion of the step as compared with that on the concave portion. Desirably, the light absorption layer is a resist capable of absorbing a portion of wavelength region of the alignment light, or a resist containing a material capable of absorbing a portion of wavelength region of the alignment light.

REFERENCES:
patent: 5308682 (1994-05-01), Morikawa
patent: 5311061 (1994-05-01), Sheck
patent: 5334466 (1994-08-01), Yasui et al.
patent: 5475268 (1995-12-01), Kawagoe et al.
patent: 5525840 (1996-06-01), Tominaga
patent: 5528372 (1996-06-01), Kawashima
patent: 5532520 (1996-07-01), Haraguchi et al.

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