Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-31
2007-07-31
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S666000, C257S659000
Reexamination Certificate
active
10908357
ABSTRACT:
Aligning metal fill shapes with corresponding holes of a metal shield is provided. The holes of the metal shield are laid out corresponding to a pre-selected grid referenced to a pre-selected origin. The metal fill shapes of the metal fill pattern, are arranged in accordance with the same pre-selected grid and referenced to the same pre-selected origin. Accordingly, regardless of the size or spacing of the metal fill holes, a metal fill shape will substantially align with a corresponding metal fill hole. Such alignment between metallization levels and the structure of the metal shield and metal fill shape pattern enhance the electric noise blocking properties of the metal shield in conjunction with the metal fill shape.
REFERENCES:
patent: 6217721 (2001-04-01), Xu et al.
patent: 6236115 (2001-05-01), Gaynes et al.
patent: 6399486 (2002-06-01), Chen et al.
patent: 6589594 (2003-07-01), Hembree
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patent: 2003/0124846 (2003-07-01), Chiang et al.
Landis Howard S.
Sucharitaves Jeanne-Tania
Greenblum & Bernstein P.L.C.
International Business Machines - Corporation
Picardat Kevin M.
Sebo William D.
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