ALD process for capacitor dielectric

Details ALD process for capacitor dielectric ALD process for capacitor dielectric

2007-12-04

2007-12-04

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S452000, C257SE21350

Reexamination Certificate

active

10630444

ABSTRACT:
Provided is a method for manufacturing a semiconductor device, including a dual-stage deposition step including: a first stage for introducing tantalum penta-ethoxide containing tantalum as a material gas into a reaction chamber in which a semiconductor substrate on a surface of which a lower electrode is made of ruthenium is placed to thus form a tantalum oxide film by a vapor-phase growth method such as a chemical vapor deposition method and the following second stage for removing from the reaction chamber the material gas introduced into the reaction chamber at the first stage and a byproduct produced at the first stage by introducing a nitrogen gas, and wherein the tantalum oxide film is formed on the semiconductor substrate, by repeating the dual-stage deposition step two or more times.

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