ALD method and apparatus

Details ALD method and apparatus ALD method and apparatus

2007-06-18

2009-10-27

Kornakov, Michael (Department: 1792)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S694000, C438S695000, C438S706000, C117S084000, C117S088000, C117S089000, C117S091000, C117S093000, C117S099000, C117S102000, C117S105000, C427S299000, C427S301000

Reexamination Certificate

active

07608539

ABSTRACT:
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed.

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