Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-03-10
1999-11-09
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257771, 257763, 438688, 438685, H01L 2348, H01L 2352, H01L 2940
Patent
active
059820373
ABSTRACT:
In order to provide an Al/Ti layered interconnection which comprises a Ti (titanium) layer and an Al layer composed of Al (aluminum) or an Al alloy both formed over a base in this order and is capable of retarding a reaction between Ti and Al and preventing pinholes from occurring, the present invention is characterized as follows: The Al layer contains Si (silicon) in a portion adjacent to the Ti layer in a concentration capable of retarding an interface reaction between Ti and Al. Further, the concentration of Si in an Al layer portion on the side above the adjacent portion is set to a concentration lower than a concentration for allowing the upper Al layer portion to produce pinholes even at the maximum.
REFERENCES:
patent: 4218291 (1980-08-01), Fukuyama et al.
patent: 4673623 (1987-06-01), Gardner et al.
patent: 5313101 (1994-05-01), Harada et al.
patent: 5355020 (1994-10-01), Lee et al.
"Characteristics of aluminum-titanium electrical contacts on silicon", Robert W. Bower, Appl. Phys. Lett., vol. 23, No.2, Jul. 15, 1973 pp. 99-101.
"The thermal stability of Al/Ti-Ta metallization on Si", M. Ben-Tzur and M. Eisenberg, J. Appl. Phys. 69 (7), Apr. 1991, pp. 3907-3914.
"Interface Reactions in Al/Ti Layered Structures", Tadashi Narita et al., Extended Abstracts of the 1994 International conference on Solid State Device and Materials, Yokohama, 1994, pp. 952-954.
"A High Performance, Four Metal Layer Interconnect System for Bipolar and BIVMOS Circuits", S.R. Wilson et al., Jun. 12-13, 1990 VMIC Conference TH-03525-1/90/0000-0042 $01.00 C 1990 IEEE, pp. 42-48.
"Al-PLAPH (Aluminum-Planarization by Post-Heatin) Process for Planarized Doub;e Metal CMOS Applications", C.C.Park et al., Jun. 11-12, 1991 VMIC Conference TH-0359-0/91/0000-0326 $01.00 C 1991 IEEE, pp. 326-328.
Harada Yusuke
Narita Tadashi
Clark Sheila V.
Frank Robert J.
OKI Electric Industry Co., Ltd.
LandOfFree
Al/Ti layered interconnection and method of forming same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Al/Ti layered interconnection and method of forming same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Al/Ti layered interconnection and method of forming same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1460374