Al-based contact formation process using Ti glue layer to preven

Details Al-based contact formation process using Ti glue layer to preven Al-based contact formation process using Ti glue layer to preven

1995-07-17

1997-02-18

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437194, H01L 21283

Patent

active

056041551

ABSTRACT:
A contact metallization process which includes a Ti glue layer has been disclosed. The Ti glue layer is formed between a barrier metal layer and an Al-based layer. The Ti glue layer prevents formation of etch resistant precipitants in or on the Al-based layer. The Ti glue layer reacts with the aluminum based layer to form TiAl.sub.3 which dissolves the precipitates. The inventive process allows proper etching of the Al-based layer and eliminates bridging.

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"Planarized Aluminum Metallization for Sub-0.5 .mu.m CMOS Technology", F. S. Chen et al., IDEM 1990, pp. 51-52, Dec. 1990.

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