Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-07-12
2005-07-12
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S522000
Reexamination Certificate
active
06917109
ABSTRACT:
An air gap structure and formation method for substantially reducing the undesired capacitance between adjacent interconnects, metal lines or other features in an integrated circuit device is disclosed. The air gap extends above, and may also additionally extend below, the interconnects desired to be isolated thus minimizing fringing fields between the lines. The integrated air gap structure and formation method can be utilized in conjunction with either damascene or conventional integrated circuit metallization schemes. Also, multiple levels of the integrated air gap structure can be fabricated to accommodate multiple metal levels while always ensuring that physical dielectric layer support is provided to the device structure underlying the interconnects.
REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 4920639 (1990-05-01), Yee
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5354711 (1994-10-01), Heitzmann et al.
patent: 5407860 (1995-04-01), Stoltz et al.
patent: 5466639 (1995-11-01), Ireland
patent: 5510645 (1996-04-01), Fitch et al.
patent: 5599745 (1997-02-01), Reinbert
patent: 5612254 (1997-03-01), Mu et al.
patent: 5614765 (1997-03-01), Avanzino et al.
patent: 5635423 (1997-06-01), Huang et al.
patent: 5702982 (1997-12-01), Lee et al.
patent: 5705430 (1998-01-01), Avanzino et al.
patent: 5708303 (1998-01-01), Jeng
patent: 5736457 (1998-04-01), Zhao
patent: 5744376 (1998-04-01), Chan et al.
patent: 5753967 (1998-05-01), Lin
patent: 5783864 (1998-07-01), Dawson et al.
patent: 5801094 (1998-09-01), Yew et al.
patent: 5821169 (1998-10-01), Nguyen et al.
patent: 5847439 (1998-12-01), Reinbert
patent: 5880018 (1999-03-01), Boeck et al.
patent: 5880026 (1999-03-01), Xing et al.
patent: 5949143 (1999-09-01), Bang
patent: 5972758 (1999-10-01), Liang
patent: 5989997 (1999-11-01), Lin et al.
patent: 5990015 (1999-11-01), Lin et al.
patent: 5998293 (1999-12-01), Dawson et al.
patent: 6001414 (1999-12-01), Huang et al.
patent: 6004883 (1999-12-01), Yu et al.
patent: 6017817 (2000-01-01), Chung et al.
patent: 6025259 (2000-02-01), Yu et al.
patent: 6027994 (2000-02-01), Huang et al.
patent: 6037249 (2000-03-01), Chiang et al.
patent: 6042996 (2000-03-01), Lin et al.
patent: 6042999 (2000-03-01), Lin et al.
patent: 6054381 (2000-04-01), Okada
patent: 6057239 (2000-05-01), Wang et al.
patent: 6063711 (2000-05-01), Chao et al.
patent: 6071805 (2000-06-01), Liu
patent: 6077767 (2000-06-01), Hwang
patent: 6077769 (2000-06-01), Huang et al.
patent: 6083821 (2000-07-01), Reinberg
patent: 6130151 (2000-10-01), Lin et al.
patent: 6143641 (2000-11-01), Kitch
patent: 6159840 (2000-12-01), Wang
patent: 6162723 (2000-12-01), Tanaka
patent: 6163066 (2000-12-01), Forbes et al.
patent: 6177329 (2001-01-01), Pang
patent: 6200891 (2001-03-01), Jagannathan et al.
patent: 6200900 (2001-03-01), Kitch
patent: 6204165 (2001-03-01), Ghoshal
patent: 6204200 (2001-03-01), Shieh et al.
patent: 6208015 (2001-03-01), Bandyopadhyay
patent: 6211057 (2001-04-01), Lin et al.
patent: 6211561 (2001-04-01), Zhao
patent: 6228770 (2001-05-01), Pradeep et al.
patent: 6242336 (2001-06-01), Ueda et al.
patent: 6291030 (2001-09-01), Chao et al.
patent: 6297125 (2001-10-01), Nag et al.
patent: 6376330 (2002-04-01), Fulford et al.
patent: 6380106 (2002-04-01), Lim et al.
patent: 2002/0028575 (2002-03-01), Besling et al.
patent: 2002/0081787 (2002-06-01), Kohl et al.
patent: 2002/0098677 (2002-07-01), Ahn et al.
patent: 2002/0106888 (2002-08-01), Vassalli et al.
patent: 2002/0127844 (2002-09-01), Grill et al.
patent: 2002/0145201 (2002-10-01), Armbrust et al.
patent: 2002/0158337 (2002-10-01), Babich et al.
patent: 2002/0163082 (2002-11-01), Lee et al.
Ueda, Tetsuya et al., “A Novel Air Gap Integration Scheme for Multi-level Interconnects using Self-Aligned Via Plugs,” 1998 Symposium on VLSI Technology Digest of Technical Papers, pp. 46-47.
Lee David
Lur Water
Wang Kuang-Chih
Yang Ming-Sheng
Gross J. Nicholas
Pham Long
United Micorelectronics Corp.
LandOfFree
Air gap structure and formation method for reducing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Air gap structure and formation method for reducing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Air gap structure and formation method for reducing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3391180