Air-gap spacer of a metal-oxide-semiconductor device

Details Air-gap spacer of a metal-oxide-semiconductor device Air-gap spacer of a metal-oxide-semiconductor device

1998-01-20

1999-06-22

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 438305, H01L 2914, H01L 2976

Patent

active

059145196

ABSTRACT:
An air-gap spacer of a metal-oxide-semiconductor device comprises a spacer and a cross-sectional L-shaped air-gap. The spacer is adjacent to a sidewall of the gate electrode but not directly contacts to the gate electrode. The cross-sectional L-shaped air-gap is located between the spacer and the gate electrode and between the spacer and the substrate so that the spacer is separated from the gate electrode and the spacer is partially separated from the substrate.

REFERENCES:
patent: 5736446 (1998-04-01), Wu
patent: 5770507 (1998-06-01), Chen et al.

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