Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-10-24
2010-06-22
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S900000, C257SE21409, C257SE29255, C438S300000, C438S303000, C438S421000, C438S422000, C438S595000
Reexamination Certificate
active
07741663
ABSTRACT:
Miniaturized complex transistor devices are formed with reduced leakage and reduced miller capacitance. Embodiments include transistors having reduced capacitance between the gate electrode and source/drain contact, as by utilizing a low-K dielectric constant sidewall spacer material. An embodiment includes forming a gate electrode on a semiconductor substrate, forming a sidewall spacer on the side surfaces of the gate electrode, forming source/drain regions by ion implantation, forming an interlayer dielectric over the gate electrode, sidewall spacers, and substrate, and forming a source/drain contact through the interlayer dielectric. The sidewall spacers and interlayer dielectric are then removed. A dielectric material, such as a low-K dielectric material, is then deposited in the gap between the gate electrode and the source/drain contact so that an air gap is formed, thereby reducing the parasitic “miller” capacitance.
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Farber David G.
Hause Fred
Lenski Markus E.
Mowry Anthony C.
Ditthavong Mori & Steiner, P.C.
Globalfoundries Inc.
Wilczewski Mary
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