Air gap interconnect structure and method thereof

Details Air gap interconnect structure and method thereof Air gap interconnect structure and method thereof

2006-08-22

2006-08-22

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S619000

Reexamination Certificate

active

07094689

ABSTRACT:
Methods for fabricating interconnect structures implementing air gaps therein is provided. In one embodiment, a semiconductor substrate with a first barrier layer formed thereon is provided. A first dielectric layer is formed above the barrier layer. The first dielectric layer is thereafter patterned and etched to form a plurality of stakes having first openings therebetween, the plurality of stakes for providing mechanical supporting strength for the interconnect structure. A sacrificial layer is formed in the first openings and above the plurality of stakes. A hard mask layer is formed above the sacrificial layer. A light sensitive layer is formed over the hard mask layer and is thereafter patterned to define a pattern therein. The hard mask layer, the sacrificial layer, and the first barrier layer are etched according to the pattern in the light sensitive layer to form second openings. The second openings are filled with a conductive material to form metal lines. The sacrificial layer is thereafter removed to form air gaps. A second barrier layer is formed over the plurality of stakes and the metal lines, the second barrier layer thereby sealing the air gaps.

REFERENCES:
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5407860 (1995-04-01), Stoltz et al.
patent: 5444015 (1995-08-01), Aitken et al.
patent: 2002/0140104 (2002-10-01), Morrow et al.
patent: 092115180 (2004-07-01), None

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