Air gap interconnect method

Details Air gap interconnect method Air gap interconnect method

2005-03-01

2005-03-01

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S411000, C438S619000, C257S522000

Reexamination Certificate

active

06861332

ABSTRACT:
A low-k dielectric sacrificial material is formed within a microelectronic structure covered with a layer defining an exhaust vent. At an appropriate time, the underlying sacrificial material is decomposed and exhausted away through the exhaust vent. Residue from the exhausted sacrificial material accumulates at the vent location during exhaustion until the vent is substantially occluded. As a result, an air gap is created having desirable characteristics as a dielectric.

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Tetsuya Ueda et al., “A novel air gap integration scheme for multi-level interconnects using self-aligned via plugs”, 1998 Symposium on VLSI Technology—Digest of Technical Papers, Jun. 9-11, 1998, IEEE, pp. 46-47.
Paul A. Kohl et al, “Air-gaps in 0.3 / spl mu / m electrical interconnections”, IEEE Electron Device Letters, vol. 21, Issue 12, Dec. 2000, pp. 557-559.

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