Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-08-14
2007-08-14
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S706000, C438S745000
Reexamination Certificate
active
10661051
ABSTRACT:
A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an electronic device such as an electrical interconnect structure. Structures containing air gaps are also provided.
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Adams Timothy G.
Calvert Jeffrey M.
Gallagher Michael K.
Gronbeck Dana A.
Baskin Jonathan D.
Chen Kin-Chan
Shipley Company L.L.C.
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