Air gap based low dielectric constant interconnect structure and

Details Air gap based low dielectric constant interconnect structure and Air gap based low dielectric constant interconnect structure and

1997-11-25

2000-05-02

Sergent, Rabon

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

427 99, 438619, 438622, 438421, 438422, H01L 21764, H01L 21312, H01L 2131

Patent

active

060572264

ABSTRACT:
An air bridge between closely spaced interconnect lines is formed by a high density plasma chemical vapor deposition of fluorinated amorphous carbon. In one particular embodiment of the present invention, to create the air bridge, high density plasma chemical vapor deposition of fluorocarbon and hydrocarbon precursors, with little or no rf bias applied to the substrate is performed. For mechanical support of subsequently formed layers, the air bridge is capped by a hard mask layer, typically formed from an insulating material such as silicon dioxide, fluorinated silicon dioxide, or silicon nitride.

REFERENCES:
patent: 5789320 (1998-08-01), Andricacos et al.
patent: 5792706 (1998-08-01), Michael et al.
patent: 5814555 (1998-09-01), Bandyopadhyay et al.
patent: 5888591 (1999-03-01), Gleason et al.
List, R. Scott, Abha Singh, Andrew Ralston, and Girish Dixit, "Integration of Low-k Dielectric Materials Into Sub-0.25-.mu.m Interconnects", MRS (Materials Research Society) Bulletin, Oct. 1997, pp. 61-69.

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