Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-12
2011-07-12
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S317000, C257SE29300
Reexamination Certificate
active
07977729
ABSTRACT:
An aging device according to an embodiment of the present invention includes a semiconductor substrate, first and second diffusion layers provided in a first element region, a floating gate provided above a channel region between the first and second diffusion layers, and a control gate electrode provided beside the floating gate with an interval in the lateral direction. A coupling capacitance between the floating gate and the control gate electrode is larger than a coupling capacitance between the floating gate and the semiconductor substrate.
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Hagishima Daisuke
Kinoshita Atsuhiro
Kobayashi Shigeki
Watanabe Hiroshi
Ho Tu-Tu V
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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