Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-02-03
2008-08-12
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23157
Reexamination Certificate
active
07411300
ABSTRACT:
Structures and methods of fabricating portions of integrated circuit devices to reduce agglomeration tendencies of high surface-energy metals used in interconnects and contacts. Early transition metals having relatively low surface energies are chosen to form stable crystalline compounds rich in the high surface-energy metal. Agglomeration control layers containing such alloy compounds facilitate adhesion between the high surface-energy metal and an underlying layer of the integrated circuit device, such as a diffusion barrier layer. These agglomeration control layers may be nitrided to improve robustness at higher temperatures.
REFERENCES:
patent: 4441964 (1984-04-01), Mikkers et al.
patent: 4985750 (1991-01-01), Hoshino
patent: 5118661 (1992-06-01), Maeda
patent: 5310602 (1994-05-01), Li et al.
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5744394 (1998-04-01), Iguchi et al.
patent: 5786269 (1998-07-01), Murakami et al.
patent: 5980977 (1999-11-01), Deng et al.
patent: 5990011 (1999-11-01), McTeer
patent: 6001461 (1999-12-01), Toyoda et al.
patent: 6069068 (2000-05-01), Rathore et al.
patent: 6084302 (2000-07-01), Sandhu
patent: 6126989 (2000-10-01), Robinson et al.
patent: 6133139 (2000-10-01), Dalal et al.
patent: 6165555 (2000-12-01), Jun et al.
patent: 6194108 (2001-02-01), Akutsu et al.
patent: 6194315 (2001-02-01), Hu et al.
patent: 6258710 (2001-07-01), Rathore et al.
patent: 6307267 (2001-10-01), Wada et al.
patent: 6376370 (2002-04-01), Farrar
patent: 6417566 (2002-07-01), Wang et al.
patent: 10-139499 (1999-11-01), None
patent: 10-294955 (2000-04-01), None
Liotard et al., “Intermetallic compound formations in titanium-copper thin-film couples”, Mar. 15, 1985, J. Appl. Phys., vol. 57, No. 6, pp. 1895-1900.
De Boer et al., “Cohesion in Metals: Transition Metal Alloys”, 1988, Amsterdam, North Holland-Elsevier Science, pp. preface-101, 105-142, 339-381, 495-535.
Subramanian et al., “Binary Alloy Phase Diagrams”, 1990, vol. I, pp. 51-52, 88, 90,113-115, 1416, 1418-1419, 1428-1429, 1494-1496, 1473-1475, 1505-1506, 1511-1513.
Wang et al., “Binary Cu-alloy layers for Cu-interconnections reliability improvement” IEEE International Proceedings on Interconnect Technology Conference, Jun. 4-6, 2001, pp. 86-88.
Nogami et al., “Characterization of the Cu/Barrier Metal Interface for Copper Interconnects”, IEEE International Proceedings on Interconnect Technology Conference, Jun. 1-3, 1998, pp. 298-300.
J. L. Liotard et al., “intermetallic Compound Formations in tianium-copper thin-film couples”, Journal of Applied Physics, vol. 57, issue 6, Mar. 15, 1985, pp. 1895-1900.
Leffert Jay & Polglaze P.A.
Malsawma Lex
Micro)n Technology, Inc.
LandOfFree
Agglomeration control using early transition metal alloys does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Agglomeration control using early transition metal alloys, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Agglomeration control using early transition metal alloys will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4004289