After etch test method and apparatus

Details After etch test method and apparatus After etch test method and apparatus

1993-10-14

1995-01-31

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156668, 156345, H01L 21306, B44C 122, B29C 3700

Patent

active

053856295

ABSTRACT:
There is a post etching test apparatus and method to be able to only test just a few die on the wafer. Uniquely, the remainder of the die on the wafer can be salvaged, if the test identifies proper tolerances for the etching process over the entire wafer surface. If the tests show negative, the etch process can be re calibrated and the wafer can be reprocessed and tested again. Salvage of the majority of the die on the wafer under test is possible by using a fine point resist removal plate. Specifically, oxygen is forced over certain die on the wafer to remove the resist mask by using a plate barrier with only a few holes in it. The holes are located a key positions around the wafer, and restrain the oxygen laminar flow to effect only the wafers directly below these holes.

REFERENCES:
patent: 4650744 (1987-03-01), Amano
Matrix System One Model 10x Photoresist Stripper, System Specifications, Apr. 27, 1988, by Matrix Integrated Systems Inc, 4131 Lake Side Dr. Richmond Calif. 94806.

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