After deposition method of thinning film to reduce pinhole...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S166000, C438S213000, C257S127000

Reexamination Certificate

active

07132316

ABSTRACT:
A method of forming a thin film is provided in which a film having a first thickness is deposited over a substrate, wherein the first thickness is greater than a thickness at which the initially deposited film begins to dewet from the substrate. The initially deposited film is then stabilized to form a stabilized film. Thereafter, the stabilized film is then thinned to a second thickness, such that the resulting film now has a smaller thickness than the thickness at which the initially deposited film would begin to dewet from the substrate. However, as a result of the prior stabilization, the reduced thickness film remains free of dewetting defects.

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