Advanced VLSI metallization

Details Advanced VLSI metallization Advanced VLSI metallization

2011-05-17

2011-05-17

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21577, C257SE21578

Reexamination Certificate

active

07943505

ABSTRACT:
A four layer interconnect structure is disclosed which includes a bottom conductive reactive layer such as titanium, a conductive barrier layer, such as titanium nitride, a conductive layer, such as aluminum-copper alloy, and a top conductive barrier layer, such as titanium nitride. The interconnection structure can be fabricated using conventional sputter deposition technology. The resulting interconnection structure provides a highly conductive thin film structure that provides good contact to tungsten plugs with small contact dimensions, good patternability on fine lines, and good reliability.

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Takamaro Kikkawa et al., “A Quarter-Micrometer Interconnection Technology Using a TiN/Al-Si-Cu/TiN/Al-Si-Cu/TiN/Ti Multilayer Structure,” IEEE Transactions on Electron Devices, vol. 40, No. 2, Feb. 1993, pp. 296-302.

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