Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-03-22
1997-03-04
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257366, 257372, 257373, 257901, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
056082533
ABSTRACT:
A novel MOS transistor structure for improving device scaling by improving short channel control includes a buried back gate beneath a channel region of the MOS transistor. A separate contact to a well that is electrically communicated to the buried back gate improves short channel controls without performance degradations. In a preferred embodiment, the back gate is grounded when turning the n-channel MOS transistor off. In alternate embodiments, the buried layer produces retrograde p wells. In some applications, multiple buried layers may be used, with one or more being planar. CMOS devices may have independent, multiple buried back gates.
REFERENCES:
patent: 4864377 (1989-09-01), Widdershoven
patent: 5191401 (1993-03-01), Shirai et al.
patent: 5247200 (1993-09-01), Momose et al.
Chang Kuang-Yeh
Liu Yowjuang W.
Advanced Micro Devices , Inc.
Ngo Ngan V.
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