Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2005-05-17
2005-05-17
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S559000
Reexamination Certificate
active
06893947
ABSTRACT:
A method for fabricating an RF enhancement mode FET (30) having improved gate properties is provided. The method comprises the steps of providing (131) a substrate (31) having a stack of semiconductor layers (32-35) formed thereon, the stack including a cap layer (35) and a central layer (33) defining a device channel, forming (103) a photoresist pattern (58) over the cap layer, thereby defining a masked region and an unmasked region, and, in any order, (a) creating (105) an implant region (36, 37) in the unmasked region, and (b) removing (107) the cap layer from the unmasked region. By forming the implant region and cap region with no overlap, a device with low current leakage may be achieved.
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Costa Julio
Hartin Olin L.
Martinez Marino J.
Rampley Colby G.
Sadaka Mariam G.
Fortkort John A.
Fortkort Grether & Kelton LLP
Le Thao P.
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