Advanced process control model incorporating a target offset...

Semiconductor device manufacturing: process – With measuring or testing

Reexamination Certificate

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C438S004000, C438S005000, C438S780000, C430S327000, C430S935000

Reexamination Certificate

active

07547561

ABSTRACT:
An advanced process control (APC) architecture comprising a process model that incorporates a target offset term is provided. The APC architecture may be applied to a so-called develop inspect critical dimension (DICD) model using the target offset term to correct at least one exposure parameter on the occurrence of an abrupt event. A corresponding event may, for example, concern a modified reflectivity of processed substrates, for example due to a rework of substrates covered by amorphous carbon material.

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patent: WO 2006/088545 (2006-08-01), None

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