Advanced low dielectric constant organosilicon plasma...

Details Advanced low dielectric constant organosilicon plasma... Advanced low dielectric constant organosilicon plasma...

2007-04-10

2007-04-10

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257S760000

Reexamination Certificate

active

10906370

ABSTRACT:
A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, —CH2— crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH3+CH2stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH3bonding of greater than about 2.0, and a peak area for Si—O—Si bonding of greater than about 60%, and a porosity of greater than about 20%.

REFERENCES:
patent: 6147009 (2000-11-01), Grill et al.
patent: 6312793 (2001-11-01), Grill et al.
patent: 6441491 (2002-08-01), Grill et al.
patent: 6479110 (2002-11-01), Grill et al.
patent: 6497963 (2002-12-01), Grill et al.
patent: 6541398 (2003-04-01), Grill et al.
patent: 6653247 (2003-11-01), MacNeil
patent: 6756323 (2004-06-01), Grill et al.
patent: 6768200 (2004-07-01), Grill et al.
patent: 6770570 (2004-08-01), Li et al.
patent: 6770573 (2004-08-01), Grill et al.
patent: 6790789 (2004-09-01), Grill et al.
patent: 7030468 (2006-04-01), Gates et al.
patent: 2003/0017635 (2003-01-01), Apen et al.
patent: 2003/0087043 (2003-05-01), Edelstein et al.
patent: 2005/0064698 (2005-03-01), Chang et al.
patent: 2005/0140029 (2005-06-01), Li et al.
patent: 2006/0084256 (2006-04-01), Cabral et al.
U.S. Appl. No. 10/964,254, “Ultra Low k Plasma Enhanced Chemical Vapor Deposition Processes Using A Single Bifunctional Precursor Containing Both A SiCOH Matrix Functionality And Organic Porogen Functionality”, Son Nguyen, et al., filed Oct. 13, 2004.
U.S. Appl. No. 10/390,801, Ultra Low K (ULK) SiCOH Film And Method, Stephen M. Gates, et al., filed Mar. 18, 2003.
U.S. Appl. No. 10/758,724, “Low K And Ultra Low K SiCOH Dielectric Films And Methods To Form The Same”, Stephen M. Gates, et al., filed Jan. 16, 2004.
U.S. Appl. No. 10/709,320, LowK Interlevel Dielectric Layer (ILD) And Method, Jia Lee, et al., filed Apr. 28, 2004.

Affiliated with

Also associated with

Rating

Advanced low dielectric constant organosilicon plasma... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Advanced low dielectric constant organosilicon plasma..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Advanced low dielectric constant organosilicon plasma... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3748146