Advanced isolation scheme for deep submicron technology

Details Advanced isolation scheme for deep submicron technology Advanced isolation scheme for deep submicron technology

1996-08-16

1999-09-07

Dang, Trung

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

438479, 438481, 438505, 438509, 438508, H01L 2136

Patent

active

059500972

ABSTRACT:
An oxide layer is thermally grown over a semiconductor body, and openings are etched in the oxide layer to expose portions of the surface of the semiconductor body. Then, epitaxial regions are grown from the semiconductor body into the openings in the oxide layer, which epitaxial regions will eventually become the active regions of devices.

REFERENCES:
patent: 4536945 (1985-08-01), Gray et al.
patent: 4929566 (1990-05-01), Beitman
patent: 5008208 (1991-04-01), Liu et al.
patent: 5554562 (1996-09-01), Chang et al.

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