Static information storage and retrieval – Read/write circuit – Particular read circuit
Reexamination Certificate
2008-03-14
2010-12-28
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Particular read circuit
C365S194000, C365S203000, C365S210130, C365S210100
Reexamination Certificate
active
07859920
ABSTRACT:
A method accurately tracks a bit line maturing time for compiler memory. The method includes enabling a dummy word line in response to an internal clock signal. The dummy word line is enabled prior to enabling a real word line. A dummy bit line is matured in response to enabling of the dummy word line. The dummy bit line matures at a same rate that a real bit line matures. The method also includes disabling the dummy word line in response to determining a threshold voltage differential based on monitoring maturation of the dummy bit line. The real word line is enabled a predefined delay after enabling of the dummy word line. Similarly, the word line is disabled the predefined delay after disabling of the dummy word line. In response to disabling the dummy word line, a sense enable signal is generated.
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Chen Nan
Chen Zhiqin
Jung Chang Ho
Ho Hoai V
Kamarchik Peter M.
Norman James G
Pauley Nicholas J.
QUALCOMM Incorporated
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