Advance integrated chemical vapor deposition (AICVD) for semicon

Details Advance integrated chemical vapor deposition (AICVD) for semicon Advance integrated chemical vapor deposition (AICVD) for semicon

1998-02-18

2000-01-11

Utech, Benjamin

Coating apparatus

Gas or vapor deposition

118719, 118724, 414938, 414939, C23C 1600

Patent

active

060131349

ABSTRACT:
An apparatus for forming a portion of an electronic device is described incorporating an Ultra High Vacuum-Chemical Vapor Deposition (UHV-CVD) system, a Low Pressure-Chemical Vapor Deposition (LP-CVD) system, and an Ultra High Vacuum (UHV) transfer system. A method for passivating a semiconductor substrate is described incorporating growing silicon containing layers, flowing a hydrogen containing gas and lowering the substrate temperature below 400.degree. C. A method for removing native oxide is described. A method for growing a continuous epitaxial layer while performing a deposition interrupt is described. A method for forming a Si/Si oxide interface is described having low interface trap density. A method for forming a Si/Si oxide/p++ polysilicon gate stack. The invention overcomes the problem of requiring silicon containing wafers being dipped in HF acid prior to CVD processing. The invention overcomes the problem of surface passivation between in-situ processes in multiple CVD reactors.

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