Adjustment of distance between source plasma and mirrors to...

Details Adjustment of distance between source plasma and mirrors to... Adjustment of distance between source plasma and mirrors to...

2007-04-24

2007-04-24

Nguyen, Kiet T. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S50400H

Reexamination Certificate

active

11433412

ABSTRACT:
According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.

REFERENCES:
patent: 7098466 (2006-08-01), Chandhok et al.
Hutcheson, G., “The First Nanochips,” Scientific American, Apr. 2004, pp. 76-83.
Stix, G., Getting More from Moore's, Scientific American.com, Apr. 17, 2001, 6 pages.

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