Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-10-01
2000-09-26
Smith, Matthew
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438128, 438129, 438594, 438597, 438598, 257202, 257208, H01L 214763
Patent
active
061241970
ABSTRACT:
The present invention is directed to a method of forming conductive interconnections in an integrated circuit device to optimize or at least maintain the speed at which signals propagate throughout the integrated circuit device. In one embodiment, the method comprises determining any variation in the size of a contact, as compared to its design size, and varying the size of a conductive line to be coupled to the contact based upon the variation in the size of the contact.
REFERENCES:
patent: 4151607 (1979-04-01), Koyanagi et al.
patent: 4544445 (1985-10-01), Jeuch et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 5405798 (1995-04-01), Ema
patent: 5422309 (1995-06-01), Zettler et al.
patent: 5565385 (1996-10-01), Rostoker et al.
patent: 5893748 (1999-04-01), Lin
patent: 5960313 (1999-09-01), Jun
patent: 6033980 (1997-11-01), Liou et al.
R.R. Uttecht. IEEE VMIC Conference Jun. 11-12 1991 # TH-0359-0/91/0000-0020 p. 20.
J. L. Yeh. IEEE VMIC Conference Jun. 13-14 1988 CH-2624-5/88/0000-0095 p. 95.
Advanced Micro Devices , Inc.
Lee Granvill D.
Smith Matthew
LandOfFree
Adjusting the size of conductive lines based upon contact size does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Adjusting the size of conductive lines based upon contact size, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Adjusting the size of conductive lines based upon contact size will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2099733