Adjusting the frequency of film bulk acoustic resonators

Details Adjusting the frequency of film bulk acoustic resonators Adjusting the frequency of film bulk acoustic resonators

2005-12-13

2005-12-13

Mai, Lam T. (Department: 2819)

Wave transmission lines and networks

Coupling networks

Electromechanical filter

C333S120000, C438S005000, C438S003000

Reexamination Certificate

active

06975184

ABSTRACT:
A material may be removed from the top electrode of a film bulk acoustic resonator to alter the mass loading effect and to adjust the frequency of one film bulk acoustic resonator on a wafer relative to other resonators on the same wafer. Similarly, the piezoelectric layer or the bottom electrode may be selectively milled with a focused ion beam to trim the resonator.

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patent: 2004/0014249 (2004-01-01), Jorgenson et al.
Wang et al., U.S. Appl. No. 10/201,796, filed Jul. 24, 2002, entitled “Adjusting the Frequency of Film Bulk Acoustic Resonators”.

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