Adjustable write voltage circuit for SRAMS

Details Adjustable write voltage circuit for SRAMS Adjustable write voltage circuit for SRAMS

1996-09-18

1998-05-26

Nelms, David C.

Static information storage and retrieval

Powering

36518909, 36518911, 365156, 365154, G11C 514

Patent

active

057577137

ABSTRACT:
A semiconductor integrated circuit includes a biasing circuit connected to a plurality of memory cells via an access line. Each of the memory cells includes at least one switching device. The biasing circuit supplies a potential, having a value between a reference voltage and the threshold voltage of the switching device, to the access line for programming one of the memory cells to a logic low level.

REFERENCES:
patent: 5020029 (1991-05-01), Ichinose et al.
patent: 5050127 (1991-09-01), Mitsumoto et al.
patent: 5070482 (1991-12-01), Miyaji
patent: 5309401 (1994-05-01), Suzuki et al.

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