Dual-gate FET attenuator controlled by a variable load circuit

Details Dual-gate FET attenuator controlled by a variable load circuit Dual-gate FET attenuator controlled by a variable load circuit

1990-09-21

1992-09-29

LaRoche, Eugene R.

Wave transmission lines and networks

Attenuators

307568, H03H 1124

Patent

active

051516691

ABSTRACT:
A dual-gate field effect transistor attenuator wherein a variable active load (1) is applied to the second gate of the dual-gate field effect transistor (T1). The attenuator is particularly suitable for space telecommunications.

REFERENCES:
patent: 3748495 (1973-07-01), Messinger
patent: 4162412 (1979-07-01), Mawhinney et al.
patent: 4700153 (1987-10-01), Salvage et al.
patent: 4806888 (1989-02-01), Salvage et al.
patent: 4890077 (1989-12-01), Sun
patent: 4918401 (1990-04-01), Langer
GaAs IC Symposium, Technical Digest 1987, Portland, Ore., Oct. 13-16, 1987, pp. 235-238, IEEE, New York, US; R. J. Naster et al.: "An L-Band Variable-Gain Amplifier GaAs MMIC with Precise Binary Step Control".
1988 IEEE MTT International Microwave Symposium Digest, New York, May 25-27, 1988, vol. 1, pp. 171-174, IEEE New York, US; R. B. Culbertson et al.: "A 3-Watt X-Band Monolithic Variable Gain Amplifier".

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