Adjustable write pulse generator within a chalcogenide...

Details Adjustable write pulse generator within a chalcogenide... Adjustable write pulse generator within a chalcogenide...

2008-12-01

2011-11-15

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S189160, C365S210130

Reexamination Certificate

active

08059454

ABSTRACT:
An adjustable write pulse generator is disclosed. The adjustable write pulse generator includes a band-gap reference current, a programmable ring oscillator, a frequency divider and a single pulse generator. The band-gap reference current circuit generates a well-compensated current over a predetermined range of temperatures needed to program a chalcogenide memory cell. The programmable ring oscillator generates a first set of continuous write “0” and write “1” pulse signals based on the well-compensated current. The frequency divider then divides the first set of continuous write “0” and write “1” pulse signals into a second set of continuous write “0” and write “1” pulse signals. The single pulse generator subsequently converts the second set of continuous write “0” and write “1” pulse signals into a single write “0” pulse signal or a single write “1” pulse signal when programming the chalcogenide memory cell.

REFERENCES:
patent: 7250821 (2007-07-01), Momii et al.
patent: 7262990 (2007-08-01), Cho et al.
patent: 2004/0051094 (2004-03-01), Ooishi
patent: 2005/0013205 (2005-01-01), Brooks et al.
patent: 2007/0158634 (2007-07-01), Ooishi

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