Adjustable windage method and mask for correction of proximity e

Details Adjustable windage method and mask for correction of proximity e Adjustable windage method and mask for correction of proximity e

1988-10-25

1990-01-23

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

378 35, 36447424, G03F 100

Patent

active

048957801

ABSTRACT:
In order to solve the problem of the proximity effects which occurs in the fabrication of integrated circuit devices, a facile method is provided for automatically creating a new pattern in which variably spaced windage correction is applied over the mask. This permits the utilization of conventional design fabrication rules and systems without the concomitant problem of producing small feature sizes in isolated structures. The method produces highly desirable chip masks and is readily implemented on commercially available CAD systems presently being employed for the production of circuit masks. The method is automatic and extremely easily implemented.

REFERENCES:
patent: 4591540 (1986-05-01), Bohlen et al.
"Calculation of Changes in Pattern Dimensions to Compensate for Proximity Effects in Electron Lithography", Mihir Parikh, IBM Research Lab., San Jose, Ca.-J. Appl. Physics, Jan. 1980, pp. 705-709.
"Control of Pattern Dimensions in Electron Lithography", H. Sewell-Philips Res. Labs., Redhill, Surrey, England,-J. Vac. Sci. Technol, 15 (3, May/Jun. 1978--pp. 927-927-930.
"Proximity Effect Correction for Electron Beam Lithography by Equalization of Background Dose"--Geraint Owen & Paul Rissman, Hewlett-Packard Labs., Palo Alt, CA--J. Appl. Phys. 54(6), Jun. 1983, pp. 3573-3581.

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