Semiconductor device having high-reliable interconnections with

Details Semiconductor device having high-reliable interconnections with Semiconductor device having high-reliable interconnections with

1989-08-21

1991-04-30

Wojciechowicz, Edward J.

357 231, 357 59, 357 71, H01L 2348

Patent

active

050123203

ABSTRACT:
A semiconductor device according to the present invention has a multiple-level gate electrode which consists of a lower polysilicon strip and an upper titanium silicide film containing a titanium oxide instead of boron or carbon for preventing the titanium silicide film from reduction in resistivity, and the device characteristics are not deteriorated, because the oxygen bonded to the titanium is stable in heat treatments and hardly diffused into the substrate.

REFERENCES:
patent: 4276557 (1981-06-01), Levinstein et al.
patent: 4533935 (1985-08-01), Mochizuki
patent: 4673968 (1987-06-01), Hieber et al.

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