Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-18
2009-08-25
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S595000, C257SE29344
Reexamination Certificate
active
07579644
ABSTRACT:
One or more on-chip VNCAP or MIMCAP capacitors utilize a variable MOS capacitor to improve the uniform capacitance value of the capacitors. This permits the production of silicon semiconductor chips on which are mounted capacitors having capacitive values that are precisely adjusted to be within a range of between about 1% and 5% of their design value. This optimization can be achieved by the use of a back-to-back connection between a pair of the variable MOS capacitors for DC decoupling. It involves the parallelization of on-chip BEOL capacitance of VNCAP and/or MIMCAP capacitors by the insertion in the FEOL of pairs of back-to-back variable MOS capacitors.
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Kim Jong-hae
Kim Moon J.
Plouchart Jean-Olivier
Trzcinski Robert E.
Dickey Thomas L
Driggs, Hogg, Daugherty & Del Zoppo Co., LPA
International Business Machines - Corporation
Lucas James A.
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