Adjustable on-chip sub-capacitor design

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S595000, C257SE29344

Reexamination Certificate

active

07579644

ABSTRACT:
One or more on-chip VNCAP or MIMCAP capacitors utilize a variable MOS capacitor to improve the uniform capacitance value of the capacitors. This permits the production of silicon semiconductor chips on which are mounted capacitors having capacitive values that are precisely adjusted to be within a range of between about 1% and 5% of their design value. This optimization can be achieved by the use of a back-to-back connection between a pair of the variable MOS capacitors for DC decoupling. It involves the parallelization of on-chip BEOL capacitance of VNCAP and/or MIMCAP capacitors by the insertion in the FEOL of pairs of back-to-back variable MOS capacitors.

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patent: 2001/0035797 (2001-11-01), Gutierrez
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patent: 2003/0107442 (2003-06-01), Staszewski
patent: 2004/0150939 (2004-08-01), Huff
patent: 2005/0127885 (2005-06-01), Jung
patent: WO 02/084684 (2002-10-01), None
Jonghae Kim et al, “Design and Manufacturability Aspect of SOI CMOS RFICs” Custom Integrated Circuits Conference, 2004, Proceedings of the IEEE 2004 Orlando, FL, USA Oct. 3-6, 2004, Piscataway, NJ, USA, IEEE, Oct. 3, 2004 pp. 541-548, XP010742374.

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