Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-08-29
2006-08-29
Nguyen, Kiet T. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S50400H
Reexamination Certificate
active
07098466
ABSTRACT:
According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.
REFERENCES:
patent: 4669884 (1987-06-01), Bigelow et al.
Hutcheson, G., “The First Nanochips,”Scientific American, Apr. 2004, pp. 76-83.
Stix, G., “Getting More from Moore's,” Scientific American.com, Apr. 17, 2001, 6 pgs.
Chandhok Manish
Panning Eric M.
Rice Bryan J.
Chen George
Intel Corporation
Nguyen Kiet T.
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